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| Manufacturer | Fairchild Semiconductor |
|---|---|
| Manufacturer's Part Number | RFD8P06ESM9A |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; |
| Datasheet | RFD8P06ESM9A Datasheet |
| In Stock | 304 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 8 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 48 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .3 ohm |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | MEGAFET |
| Maximum Drain Current (Abs) (ID): | 8 A |
