GS66516T-E02-MR by Gan Systems | Transistors

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Manufacturer	Gan Systems
Manufacturer's Part Number	GS66516T-E02-MR
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .032 ohm;
Datasheet	GS66516T-E02-MR Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	GALLIUM NITRIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
Terminal Finish:	GOLD OVER NICKEL
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Drain-Source On Resistance:	.032 ohm
Moisture Sensitivity Level (MSL):	3
Maximum Feedback Capacitance (Crss):	5.9 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Maximum Drain Current (Abs) (ID):	60 A
Peak Reflow Temperature (C):	260

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