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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | 2N6845 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Pulsed Drain Current (IDM): 16 A; Reference Standard: MILITARY STANDARD (USA); |
| Datasheet | 2N6845 Datasheet |
| In Stock | 51 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 2.5 A |
| Maximum Pulsed Drain Current (IDM): | 16 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 20 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 1.2 ohm |
| Avalanche Energy Rating (EAS): | 115 mJ |
| JEDEC-95 Code: | TO-205AF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | MILITARY STANDARD (USA) |
| Maximum Drain Current (Abs) (ID): | 4 A |
