Infineon Technologies - AIGB30N65F5

AIGB30N65F5 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	AIGB30N65F5
Description	N-Channel; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 55 A; Nominal Turn Off Time (toff): 215 ns; Maximum Gate-Emitter Threshold Voltage: 4.8 V; Nominal Turn On Time (ton): 30 ns;
Datasheet	AIGB30N65F5 Datasheet
In Stock	889

AIGB30N65F5 Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	215 ns
Maximum Collector Current (IC):	55 A
Maximum Power Dissipation (Abs):	188 W
Maximum Collector-Emitter Voltage:	650 V
Nominal Turn On Time (ton):	30 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	4.8 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	2.1 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
889	-	-

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