Infineon Technologies - AIGB50N65H5

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AIGB50N65H5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AIGB50N65H5
Description N-Channel; Maximum Power Dissipation (Abs): 305 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 2.1 V; Transistor Element Material: SILICON;
Datasheet AIGB50N65H5 Datasheet
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NAME DESCRIPTION
Nominal Turn Off Time (toff): 204 ns
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 305 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 25 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.1 V
Minimum Operating Temperature: -40 Cel
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