Infineon Technologies - AIGBE40N65F5

AIGBE40N65F5 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	AIGBE40N65F5
Description	N-Channel; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Maximum VCEsat: 2.1 V; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 4.8 V;
Datasheet	AIGBE40N65F5 Datasheet
In Stock	567

AIGBE40N65F5 Technical Details

NAME	DESCRIPTION
Nominal Turn Off Time (toff):	194 ns
Maximum Collector Current (IC):	74 A
Maximum Power Dissipation (Abs):	250 W
Maximum Collector-Emitter Voltage:	650 V
Nominal Turn On Time (ton):	26 ns
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	4.8 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	2.1 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
567	-	-

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