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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | AUIRF7416QTRPBF |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, HIGH RELIABILITY; Avalanche Energy Rating (EAS): 370 mJ; Package Shape: RECTANGULAR; |
Datasheet | AUIRF7416QTRPBF Datasheet |
In Stock | 502 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 370 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 10 A |
JEDEC-95 Code: | MS-012AA |
Maximum Pulsed Drain Current (IDM): | 45 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED, HIGH RELIABILITY |
Maximum Drain-Source On Resistance: | .02 ohm |