Infineon Technologies - AUIRF7769L2TR

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AUIRF7769L2TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRF7769L2TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Terminal Form: NO LEAD; Reference Standard: AEC-Q101;
Datasheet AUIRF7769L2TR Datasheet
In Stock8,005
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 260 mJ
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 500 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 9
Minimum DS Breakdown Voltage: 100 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N9
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0035 ohm
Moisture Sensitivity Level (MSL): 1
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