Infineon Technologies - AUIRFN7107TR

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AUIRFN7107TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRFN7107TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-F5; Additional Features: ULTRA LOW RESISTANCE;
Datasheet AUIRFN7107TR Datasheet
In Stock5,828
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 123 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 14 A
Maximum Pulsed Drain Current (IDM): 300 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 75 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0085 ohm
Moisture Sensitivity Level (MSL): 1
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