Infineon Technologies - AUIRFN8403TR

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AUIRFN8403TR by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRFN8403TR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Package Shape: RECTANGULAR; Additional Features: ULTRA LOW RESISTANCE;
Datasheet AUIRFN8403TR Datasheet
In Stock242
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 95 A
Maximum Pulsed Drain Current (IDM): 492 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 94 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0033 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Additional Features: ULTRA LOW RESISTANCE
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 95 A
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Pricing (USD)

Qty. Unit Price Ext. Price
242 $0.780 $188.760

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