Infineon Technologies - AUIRLI2505

AUIRLI2505 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number AUIRLI2505
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 500 mJ;
Datasheet AUIRLI2505 Datasheet
In Stock479
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 500 mJ
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 58 A
Maximum Pulsed Drain Current (IDM): 360 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum DS Breakdown Voltage: 55 V
Maximum Power Dissipation (Abs): 63 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, FAST SWITCHING
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 58 A
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .01 ohm
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Pricing (USD)

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