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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | AUIRLI2505 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 500 mJ; |
| Datasheet | AUIRLI2505 Datasheet |
| In Stock | 479 |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 500 mJ |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 58 A |
| Maximum Pulsed Drain Current (IDM): | 360 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Minimum DS Breakdown Voltage: | 55 V |
| Maximum Power Dissipation (Abs): | 63 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED, FAST SWITCHING |
| Maximum Operating Temperature: | 175 Cel |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 58 A |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .01 ohm |









