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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | AUIRLI2505 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 500 mJ; |
Datasheet | AUIRLI2505 Datasheet |
In Stock | 479 |
NAME | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 500 mJ |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 58 A |
Maximum Pulsed Drain Current (IDM): | 360 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum DS Breakdown Voltage: | 55 V |
Maximum Power Dissipation (Abs): | 63 W |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | AVALANCHE RATED, FAST SWITCHING |
Maximum Operating Temperature: | 175 Cel |
Reference Standard: | AEC-Q101 |
Maximum Drain Current (Abs) (ID): | 58 A |
Case Connection: | ISOLATED |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .01 ohm |