Infineon Technologies - BF1005RE6327

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BF1005RE6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BF1005RE6327
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .025 A; Maximum Drain Current (ID): .025 A;
Datasheet BF1005RE6327 Datasheet
In Stock831
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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