Infineon Technologies - BF2030W-H6814

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BF2030W-H6814 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BF2030W-H6814
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet BF2030W-H6814 Datasheet
In Stock570
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .04 A
Maximum Drain Current (Abs) (ID): .04 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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