BFP640FESDE6327 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BFP640FESDE6327
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: X BAND;
Datasheet	BFP640FESDE6327 Datasheet
In Stock	2,328

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	46000 MHz
Other Names:	BFP640FESDE6327CT BFP 640FESD E6327TR-ND SP000607096 BFP640FESDE6327 BFP 640FESD E6327DKR-ND BFP640FESDE6327DKR BFP 640FESD E6327CT-ND BFP 640FESD E6327CT BFP 640FESD E6327DKR BFP640FESDE6327TR BFP 640FESD E6327TR
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON GERMANIUM CARBON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum Operating Temperature:	150 Cel
No. of Terminals:	4
Maximum Collector-Emitter Voltage:	4.1 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Highest Frequency Band:	X BAND
Maximum Operating Temperature:	150 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,328	-	-

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;

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TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;