Infineon Technologies - BG3130R-E6433

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BG3130R-E6433 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BG3130R-E6433
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .025 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet BG3130R-E6433 Datasheet
In Stock331
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .025 A
Maximum Drain Current (Abs) (ID): .025 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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