Infineon Technologies - BGB717L7ESDE6327XTSA1

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

The Mini-circuits PMA3-14LN+ is a wide band low power RF amplifier with 20.3 dB gain, operating from 50 MHz to 10 GHz. It has a max input power of 12 dBm and VSWR of 1.22, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;

WIDE BAND LOW POWER; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Minimum Operating Frequency: 6000 MHz; JESD-609 Code: e4; Gain: 16.5 dB; Maximum Input Power (CW): 0 dBm;

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.

HMC516LC5TR by Analog Devices is a GAAS wide band low power RF amplifier with 1 function and 32 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V, drawing a max current of 88mA. This surface mount package is suitable for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

Analog Devices' HMC505LP4 is a RF amplifier with 24 terminals, operating from -40 to 85°C. It has a VSWR of 2, operates at frequencies b/w 6800-7400 MHz, and has a characteristic impedance of 50Ω. Ideal for narrowband low-power applications requiring surface mount technology.

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;

Analog Devices' HMC498LC4 is a GAAS RF amplifier with 18dB gain, operating from 17-24GHz. It has a max input power of 10dBm and operates on a 5V supply. This wideband medium-power device is ideal for RF and microwave applications requiring high performance in a compact ceramic package.

The Mini-circuits GALI-6 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for surface mount applications in RF & microwave systems, it offers VSWR of 2 and operates b/w -45°C to +85°C.