Infineon Technologies - BSC014N04LSATMA1

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BSC014N04LSATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC014N04LSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Additional Features: ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE;
Datasheet BSC014N04LSATMA1 Datasheet
In Stock10,110
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 32 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0019 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 170 mJ
Other Names: SP000871196
BSC014N04LSATMA1DKR
BSC014N04LSTR
BSC014N04LSDKR
BSC014N04LSATMA1TR
BSC014N04LSTR-ND
BSC014N04LSATMA1CT
BSC014N04LSDKR-ND
BSC014N04LS-ND
BSC014N04LS
BSC014N04LSCT-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Additional Features: ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
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