Infineon Technologies - BSC017N04NSGXT

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BSC017N04NSGXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC017N04NSGXT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Maximum Pulsed Drain Current (IDM): 400 A; JESD-30 Code: R-PDSO-F8;
Datasheet BSC017N04NSGXT Datasheet
In Stock229
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 295 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 139 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0017 ohm
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