Infineon Technologies - BSC026N04LSATMA1

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BSC026N04LSATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC026N04LSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
Datasheet BSC026N04LSATMA1 Datasheet
In Stock11,706
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 50 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 23 A
Maximum Pulsed Drain Current (IDM): 400 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0036 ohm
Moisture Sensitivity Level (MSL): 1
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