Infineon Technologies - BSC035N04LSGATMA1

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BSC035N04LSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC035N04LSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;
Datasheet BSC035N04LSGATMA1 Datasheet
In Stock15,019
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0053 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 65 mJ
Other Names: BSC035N04LS GDKR
BSC035N04LS GTR-ND
BSC035N04LSGATMA1DKR
BSC035N04LS GCT-ND
BSC035N04LSGATMA1DKR-NDTR-ND
BSC035N04LS G-ND
BSC035N04LSGATMA1TR
BSC035N04LS GCT
BSC035N04LS G
BSC035N04LSGATMA1CT-NDTR-ND
BSC035N04LSG
SP000391503
BSC035N04LSGATMA1CT
BSC035N04LS GDKR-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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