Infineon Technologies - BSC750N10NDG

BSC750N10NDG by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC750N10NDG
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
Datasheet BSC750N10NDG Datasheet
In Stock253
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.2 A
Maximum Pulsed Drain Current (IDM): 52 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 26 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .075 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 17 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 13 A
Peak Reflow Temperature (C): 260
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