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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC750N10NDGATMA1 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 17 mJ; No. of Terminals: 8; No. of Elements: 2; |
| Datasheet | BSC750N10NDGATMA1 Datasheet |
| In Stock | 2,228 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.2 A |
| Maximum Pulsed Drain Current (IDM): | 52 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .075 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 17 mJ |
| Other Names: |
BSC750N10NDGATMA1DKR BSC750N10ND G-ND BSC750N10ND GCT BSC750N10NDGATMA1CT BSC750N10NDG SP000359610 BSC750N10ND GCT-ND 2156-BSC750N10NDGATMA1 BSC750N10ND GDKR-ND BSC750N10ND G IFEINFBSC750N10NDGATMA1 BSC750N10ND GTR BSC750N10NDGATMA1TR BSC750N10ND GTR-ND BSC750N10ND GDKR |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
