Infineon Technologies - BSL307SPH6327XTSA1

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BSL307SPH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL307SPH6327XTSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Transistor Application: SWITCHING; Additional Features: AVALANCHE RATED;
Datasheet BSL307SPH6327XTSA1 Datasheet
In Stock11,933
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .043 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 44 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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