Infineon Technologies - BSM100GB120D

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BSM100GB120D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM100GB120D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 100 A; No. of Elements: 1; Maximum VCEsat: 2.8 V; Maximum Collector-Emitter Voltage: 1200 V;
Datasheet BSM100GB120D Datasheet
In Stock896
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 1000 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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