Infineon Technologies - BSM200GA120DLCSHOSA1

FGPF10N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 20A max collector current, and 42W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.

IGB50N60TATMA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it suitable for power control applications requiring fast switching speeds. This insulated gate bipolar transistor (IGBT) comes in a surface-mount package with GULL WING terminals, ideal for high-power electronic systems operating at temperatures up to 175°C.

IRG4IBC20KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Power Dissipation of 34W. It has a Nominal Turn Off Time of 380ns, making it ideal for POWER CONTROL applications requiring fast switching speeds and high voltage handling capabilities. The package style is FLANGE MOUNT with THROUGH-HOLE terminals, suitable for various power control systems operating up to 150°C.

N-CHANNEL; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED;

IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Package Shape: RECTANGULAR;

FF450R12KT4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max Collector-Emitter Voltage of 1200V and Nominal Turn Off Time of 720ns, making it ideal for POWER CONTROL applications. The transistor operates at temperatures as low as -40°C and comes in a RECTANGULAR package style with 7 terminals.

IRG4RC10SDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 14A. It is designed for POWER CONTROL applications, featuring a small outline package style and built-in diode for efficient performance in power electronics systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;

Infineon Technologies' FF450R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.3V and IC of 600A. Operates at -40 to 150 °C, featuring a max VCE of 1700V and Pmax of 2500W in a rectangular package style.

FGH60N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 120A max collector current. It has a single configuration with built-in diode, ideal for power control applications. With a max power dissipation of 378W and operating temperature of 150°C, it offers fast switching times of 62ns fall time and 66ns turn on time.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Transistor Element Material: SILICON; Terminal Position: UPPER;

NXH50C120L2C2ES1G by Onsemi is an IGBT transistor with 6 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 50A of collector current. Ideal for power control applications, it operates b/w -40°C to 150°C temperature range.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSIP-T3; Maximum Collector-Emitter Voltage: 600 V;

IRG4BC30FD1PBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a 740ns turn off time, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can handle up to 100W of power dissipation at a max operating temperature of 150°C.

FGH80N60FD2TU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 80A max collector current, and 290W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and offers fast switching times of 74ns turn on and 100ns fall time.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: 3 BANKS, PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1250 W; Maximum Collector Current (IC): 150 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 8.5 A; Transistor Application: POWER CONTROL; JEDEC-95 Code: TO-252AA;