Infineon Technologies - BSM300GA160D

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BSM300GA160D by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM300GA160D
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 400 A; Maximum VCEsat: 3.7 V; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1600 V;
Datasheet BSM300GA160D Datasheet
In Stock733
NAME DESCRIPTION
Maximum Collector Current (IC): 400 A
Maximum Power Dissipation (Abs): 2500 W
Maximum Collector-Emitter Voltage: 1600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.7 V
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