Infineon Technologies - BSM300GA170DN2S

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BSM300GA170DN2S by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM300GA170DN2S
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2500 W; Maximum Collector Current (IC): 440 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum Operating Temperature: 125 Cel; No. of Elements: 1;
Datasheet BSM300GA170DN2S Datasheet
In Stock413
NAME DESCRIPTION
Maximum Collector Current (IC): 440 A
Maximum Power Dissipation (Abs): 2500 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.9 V
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Pricing (USD)

Qty. Unit Price Ext. Price
413 $122.100 $50,427.300

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