Infineon Technologies - BSM35GB120DL

FB30R06W1E3_B1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements and a max VCEsat of 2V. It is designed for power control applications, offering a nominal turn off time of 245ns and a max collector-emitter voltage of 600V. With a package style of FLANGE MOUNT, it can handle up to 115W power dissipation at a max operating temperature of 175°C.

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel;

The Mitsubishi Electric CM450DX-24T is an N-channel IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.05V and can handle up to 450A collector current. Ideal for power control applications with a max power dissipation of 2500W and operating temperature range from -40°C to 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;

IHW30N120R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector-emitter voltage of 1200V. It is designed for power control applications, featuring a nominal turn off time of 520ns and a max power dissipation of 330W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Terminal Finish: Tin/Lead (Sn/Pb);

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;

AUIRG4BC30SSTRL by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration, suitable for power control applications, with a max power dissipation of 100W. This surface-mount device has a rectangular package shape and GULL WING terminals, making it ideal for high-power electronic systems.

Vincotech V23990-K230-F40-/1A/-PM is a N-CHANNEL IGBT bridge with 6 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.2V, IC of 88A, and Pmax of 246W. Operates up to 175°C with VCE(max) at 1200V making it suitable for high-power systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;

IGW40N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 414ns nominal turn off time. Ideal for power control applications, this transistor features a single configuration in a rectangular package with through-hole terminals.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED;

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.

FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.

Infineon Technologies' FF200R12KT4HOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, each with a BUILT-IN DIODE. It has a max voltage of 1200V, max current of 320A, and turn-off time of 700ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.

IKQ75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 454ns and turn-on time of 81ns, this transistor operates from -40°C temperature range.

FGH40T120SMD_F155 by Fairchild Semiconductor is an N-CHANNEL IGBT with 555W power dissipation, 1200V collector-emitter voltage, and 80A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery and renewable energy systems.

FGH60N60UFDTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 120A. It has a nominal turn-off time of 204ns, making it ideal for power control applications requiring high-speed switching capabilities. The transistor's package style is flange mount with through-hole terminals, suitable for applications where efficient heat dissipation is crucial.