Infineon Technologies - BSM35GD120DN2

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BSM35GD120DN2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSM35GD120DN2
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BSM35GD120DN2 Datasheet
In Stock479
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Nominal Turn Off Time (toff): 450 ns
No. of Terminals: 17
Maximum Power Dissipation (Abs): 280 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 120 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X17
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 3.2 V
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Pricing (USD)

Qty. Unit Price Ext. Price
479 $60.560 $29,008.240

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