Infineon Technologies - BSM50GAL120DN2

BSM50GAL120DN2 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSM50GAL120DN2
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 76 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 3.2 V;
Datasheet	BSM50GAL120DN2 Datasheet
In Stock	57

BSM50GAL120DN2 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	76 A
Maximum Power Dissipation (Abs):	400 W
Maximum Collector-Emitter Voltage:	1200 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	3.2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
57	-	-

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