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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSM75GD170DL |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR; |
| Datasheet | BSM75GD170DL Datasheet |
| In Stock | 812 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 150 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 930 ns |
| No. of Terminals: | 19 |
| Maximum Power Dissipation (Abs): | 625 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 200 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X19 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 125 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1700 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 3.3 V |
