Infineon Technologies - BSO200P03SNTMA1

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BSO200P03SNTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO200P03SNTMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; No. of Elements: 1;
Datasheet BSO200P03SNTMA1 Datasheet
In Stock723
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 580 pF
Maximum Drain Current (ID): 7.4 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Maximum Drain-Source On Resistance: .02 ohm
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