Infineon Technologies - BSO211PNTMA1

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BSO211PNTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSO211PNTMA1
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 28 mJ; Minimum DS Breakdown Voltage: 20 V;
Datasheet BSO211PNTMA1 Datasheet
In Stock978
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 28 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.7 A
Maximum Pulsed Drain Current (IDM): 18.8 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .067 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
978 $0.389 $380.442

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