
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | BSO220N03MSGXUMA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .022 ohm; JESD-30 Code: R-PDSO-G8; |
Datasheet | BSO220N03MSGXUMA1 Datasheet |
In Stock | 498 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 6.1 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum Drain-Source On Resistance: | .022 ohm |