Infineon Technologies - BSP171E6327

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BSP171E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP171E6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 1.7 A;
Datasheet BSP171E6327 Datasheet
In Stock1,567
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 8 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.7 A
Maximum Pulsed Drain Current (IDM): 6.8 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .35 ohm
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