Infineon Technologies - BSP321PH6327

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BSP321PH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP321PH6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Case Connection: DRAIN; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
Datasheet BSP321PH6327 Datasheet
In Stock374
NAME DESCRIPTION
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 42 pF
Maximum Drain Current (ID): .00098 A
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 100 V
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
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