Infineon Technologies - BSP322PL6327HTSA1

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BSP322PL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP322PL6327HTSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Pulsed Drain Current (IDM): 4 A; Maximum Operating Temperature: 150 Cel;
Datasheet BSP322PL6327HTSA1 Datasheet
In Stock2,707
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 13.4 ns
Maximum Drain Current (ID): 1 A
Maximum Pulsed Drain Current (IDM): 4 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 44.3 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 57 mJ
Other Names: BSP322P L6327
SP000212229
2156-BSP322PL6327HTSA1-ITTR
BSP322P L6327-ND
BSP322PL6327HTSA1TR
INFINFBSP322PL6327HTSA1
Maximum Feedback Capacitance (Crss): 51 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
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