Infineon Technologies - BSPB77N06S2-12

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BSPB77N06S2-12 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSPB77N06S2-12
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 56 A;
Datasheet BSPB77N06S2-12 Datasheet
In Stock753
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 158 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 56 A
Maximum Drain Current (Abs) (ID): 56 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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