Infineon Technologies - BSPD26N06S2L-35

BSPD26N06S2L-35 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSPD26N06S2L-35
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 22 A;
Datasheet	BSPD26N06S2L-35 Datasheet
In Stock	164

BSPD26N06S2L-35 Technical Details

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	68 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (ID):	22 A
Maximum Drain Current (Abs) (ID):	22 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

Pricing (USD)

Qty.	Unit Price	Ext. Price
164	-	-

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