Infineon Technologies - BSS159H6327

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BSS159H6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS159H6327
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 5.9 pF; Operating Mode: DEPLETION MODE;
Datasheet BSS159H6327 Datasheet
In Stock433
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 5.9 pF
Maximum Drain Current (ID): .23 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): .36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): .23 A
Maximum Drain-Source On Resistance: 3.5 ohm
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