BSZ060NE2LSATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ060NE2LSATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; JESD-609 Code: e3; No. of Elements: 1;
Datasheet	BSZ060NE2LSATMA1 Datasheet
In Stock	28,139

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0081 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	16 mJ
Other Names:	BSZ060NE2LS BSZ060NE2LS-ND BSZ060NE2LSATMA1CT BSZ060NE2LSDKR-ND BSZ060NE2LSCT-ND SP000776122 BSZ060NE2LSTR-ND BSZ060NE2LSATMA1DKR BSZ060NE2LSDKR BSZ060NE2LSATMA1TR BSZ060NE2LSCT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	25 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
28,139	-	-

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