BSZ099N06LS5ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ099N06LS5ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
Datasheet	BSZ099N06LS5ATMA1 Datasheet
In Stock	47,370

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0099 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	19 mJ
Other Names:	SP001352990 448-BSZ099N06LS5ATMA1TR 448-BSZ099N06LS5ATMA1DKR 448-BSZ099N06LS5ATMA1CT BSZ099N06LS5ATMA1-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
47,370	-	-

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