BSZ215CHXTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ215CHXTMA1
Description	N-CHANNEL AND P-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 11 mJ; Operating Mode: ENHANCEMENT MODE;
Datasheet	BSZ215CHXTMA1 Datasheet
In Stock	70,016

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	5.1 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.055 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	11 mJ
Other Names:	448-BSZ215CHXTMA1DKR BSZ215CHXTMA1-ND INFINFBSZ215CHXTMA1 SP001277210 2156-BSZ215CHXTMA1 448-BSZ215CHXTMA1TR 448-BSZ215CHXTMA1CT
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
70,016	-	-

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