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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BTS950 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; No. of Terminals: 5; Maximum Drain-Source On Resistance: .8 ohm; Transistor Element Material: SILICON; |
| Datasheet | BTS950 Datasheet |
| In Stock | 19 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 9 A |
| Maximum Pulsed Drain Current (IDM): | 36 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| JESD-609 Code: | e0 |
| No. of Terminals: | 5 |
| Minimum DS Breakdown Voltage: | 500 V |
| Qualification: | Not Qualified |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 9 A |
| Maximum Drain-Source On Resistance: | .8 ohm |
