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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BUZ103SL-4 |
| Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.6 W; Avalanche Energy Rating (EAS): 140 mJ; Terminal Position: DUAL; |
| Datasheet | BUZ103SL-4 Datasheet |
| In Stock | 77 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.8 A |
| Maximum Pulsed Drain Current (IDM): | 19.2 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 28 |
| Maximum Power Dissipation (Abs): | 9.6 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G28 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .055 ohm |
| Avalanche Energy Rating (EAS): | 140 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 55 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Maximum Drain Current (Abs) (ID): | 4.8 A |









