Infineon Technologies - BUZ61A

BUZ61A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ61A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Finish: TIN LEAD; Terminal Form: THROUGH-HOLE;
Datasheet BUZ61A Datasheet
In Stock842
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 44 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .5 ohm
Avalanche Energy Rating (EAS): 570 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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