Infineon Technologies - CFY65-14

  1. Home
  2. Infineon Technologies - CFY65-14
CFY65-14 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number CFY65-14
Description N-CHANNEL; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (Abs) (ID): .07 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .07 A;
Datasheet CFY65-14 Datasheet
In Stock321
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .07 A
Maximum Drain Current (Abs) (ID): .07 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
321 - -

Popular Products

Category Top Products

BF511TRL13 by NXP Semiconductors

BF511TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: DEPLETION MODE; Transistor Application: AMPLIFIER;
CLF1G0035S-100,112 by NXP Semiconductors

CLF1G0035S-100,112

NXP Semiconductors

N-CHANNEL; Maximum Operating Temperature: 250 Cel;
ATF-36163-TR1G by Agilent Technologies

ATF-36163-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
BLF184XRSU by Ampleon Netherlands B V

BLF184XRSU

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
TGF1350SPMX by Texas Instruments

TGF1350SPMX

Texas Instruments

TGF1350SPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage and 8dB Power Gain. Ideal for KU BAND applications, it operates in DEPLETION MODE with 0.1A Drain Current, 0.7W Power Dissipation, and up to 150°C Operating Temperature.
D2081UK by Tt Electronics Plc

D2081UK

Tt Electronics Plc

D2081UK by Tt Electronics Plc is an N-CHANNEL RF Small Signal FET for AMPLIFIER applications. It features a 65V DS Breakdown Voltage, 11 dB Power Gain, and operates in ENHANCEMENT MODE at up to 150°C. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for high-performance RF amplification needs.
2N4416A by NXP Semiconductors

2N4416A

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Operating Mode: DEPLETION MODE;
J310 by NXP Semiconductors

J310

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: DEPLETION MODE;
BF904WR-TAPE-7 by NXP Semiconductors

BF904WR-TAPE-7

NXP Semiconductors

BF904WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 7V, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
934028850215 by NXP Semiconductors

934028850215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Transistor Application: AMPLIFIER; Case Connection: SOURCE;
BF512-TAPE-13 by NXP Semiconductors

BF512-TAPE-13

NXP Semiconductors

BF512-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF901-T by NXP Semiconductors

BF901-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MMBFU310LT3 by Onsemi

MMBFU310LT3

Onsemi

The Onsemi MMBFU310LT3 is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring GULL WING terminals and a RECTANGULAR package, it has a Crss of 2.5 pF for high-frequency performance.
2N3819 by Allegro MicroSystems

2N3819

Allegro MicroSystems

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;
CPH6904-TL-E by Onsemi

CPH6904-TL-E

Onsemi

CPH6904-TL-E by Onsemi is an N-CHANNEL RF FET with 0.7W power dissipation, 150°C max temp, and JUNCTION tech. Ideal for surface mount applications in electronics requiring high-frequency signal amplification.
BF244BZL1 by Onsemi

BF244BZL1

Onsemi

BF244BZL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a SINGLE configuration and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF998TRL by NXP Semiconductors

BF998TRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;
ATF-54143-BLKG by Broadcom

ATF-54143-BLKG

Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
ATF-55143-TR2G by Agilent Technologies

ATF-55143-TR2G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .1 A; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN;
3N204 by Texas Instruments

3N204

Texas Instruments

3N204 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage and 14dB Power Gain, ideal for AMPLIFIER applications. Operating in DUAL GATE, DEPLETION MODE, it offers 0.05A Drain Current and 0.36W Power Dissipation at 200°C. Package: METAL CYLINDRICAL with SOURCE AND SUBSTRATE connection.