Infineon Technologies - CGY50E6327

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

QPL9547TR7 by Qorvo is a wide band low power RF amplifier with 17.5 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 22 dBm and VSWR of 1.54, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

AMMP-6220-TR2 by Broadcom is a wide band low power RF amplifier with 22 dB gain. It operates from 6 GHz to 20 GHz, with max input power of 15 dBm and characteristic impedance of 50 ohm. Ideal for applications requiring surface mount construction in RF & microwave systems.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;

Mini-circuits PSA4-5043+ is a wideband low power RF amplifier with 16.5 dB gain, operating from 50 MHz to 4000 MHz. It can handle up to 23 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11.4 dB;

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.