Infineon Technologies - DDB6U134N16RR_B11

DDB6U134N16RR_B11 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number DDB6U134N16RR_B11
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 125 A; Nominal Turn Off Time (toff): 510 ns;
Datasheet DDB6U134N16RR_B11 Datasheet
In Stock116
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 125 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 510 ns
No. of Terminals: 19
Maximum Power Dissipation (Abs): 400 W
Terminal Position: UPPER
Nominal Turn On Time (ton): 150 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X19
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 125 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.6 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
116 - -

Popular Products

Category Top Products