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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | DDB6U84N16RRBOSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER; |
| Datasheet | DDB6U84N16RRBOSA1 Datasheet |
| In Stock | 723 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
DDB6U84N16RR-ND DDB6U84N16RR SP000100266 |
| Package Body Material: | UNSPECIFIED |
| Maximum Collector Current (IC): | 50 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE |
| Transistor Element Material: | SILICON |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 17 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X17 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









